1/6 target data june 2002 STGP12NB60HD n-channel 12a - 600v - to-220 powermesh ? igbt n high input impedance n low on-voltage drop (v cesat ) n off losses include tail current n low gate charge n high current capability n very high frequency operation n co-packaged with turboswitcht n antiparallel diode description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has de- signed an advanced family of igbts, the power- mesh ? igbts, with outstanding perfomances. the suffix oho identifies a family optimized for high frequency applications (up to 50khz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. applications n high frequency motor controls n smps and pfc in both hard switch and resonant topologies n ups absolute maximum ratings type v ces v ce(sat) i c STGP12NB60HD 600 v < 2.8 v12a symbol parameter value unit v ces collector-emitter voltage (v gs =0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuos) at t c =25 c 24 a i c collector current (continuos) at t c = 100 c 12 a i cm ( n ) collector current (pulsed) 96 a p tot total dissipation at t c =25 c 100 w derating factor 0.8 w/ c t stg storage temperature 65 to 150 c t j max. operating junction temperature 150 c to-220 1 2 3 internal schematic diagram
STGP12NB60HD 2/6 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic switching on diode inside: stth506 rthj-case thermal resistance junction-case max 1.25 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w rthc-sink thermal resistance case-sink typ 0.5 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collectro-emitter breakdown voltage i c = 250 m a, v ge = 0 600 v i ces collector cut-off (v ge =0) v ce = max rating, t c =25 c 10 m a v ce = max rating, t c = 125 c 100 m a i ges gate-emitter leakage current (v ce =0) v ge = 20v , v ce =0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250 m a 35v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c =12a 2.0 2.8 v v ge = 15v, i c = 12 a, tj =125 c 1.7 v symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25v , i c =12a tbd s c ies input capacitance v ce = 25v, f = 1 mhz, v ge =0 tbd pf c oes output capacitance tbd pf c res reverse transfer capacitance tbd pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480v, i c =12a, v ge = 15v tbd tbd tbd nc nc nc i cl latching current v clamp = 480 v , tj = 150 c r g =10 w 48 a symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v cc = 480 v, i c =12a r g =10 w ,v ge =15v 5 46 ns ns (di/dt) on eon turn-on current slope turn-on switching losses v cc = 480 v, i c =12a r g =10 w, v ge =15v, tj =125 c 1000 290 a/ m s m j
3/6 STGP12NB60HD electrical characteristics (continued) switching off note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) symbol parameter test condit ions min. typ. max. unit t c cross-over time v cc = 480 v, i c = 12a, r ge =10 w ,v ge =15v 150 ns t r (v off ) off voltage rise time 27 ns t d ( off ) delay time 76 ns t f fall time 92 ns e off (**) turn-off switching loss 0.21 m j e ts total switching loss 0.49 m j t c cross-over time v cc = 480 v, i c =12a, r ge =10 w ,v ge =15v tj = 125 c 230 ns t r (v off ) off voltage rise time 76 ns t d ( off ) delay time 95 ns t f fall time 200 ns e off (**) turn-off switching loss 0.45 m j e ts total switching loss 0.74 m j
STGP12NB60HD 4/6 fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
5/6 STGP12NB60HD dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
STGP12NB60HD 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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